MRC | Criteria | Characteristic |
---|---|---|
AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
SR-1 | DEFINITIVE GOVERNMENT SPEC/STD REFERENCE | 5962-8959815MXA |
CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
CZEQ | TIME RATING PER CHACTERISTIC | 85.00 NANOSECONDS NOMINAL ACCESS |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM INPUT AND 7.0 VOLTS MAXIMUM INPUT |
SR-1 | SPEC/STD CONTROLLING DATA | |
CSWJ | (NON-CORE DATA) WORD QUANTITY | 131072 |
SR-1 | MANUFACTURERS CODE | 67268 |
AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
CZER | MEMORY DEVICE TYPE | RAM |
CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
SR-1 | NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE | 5962-89598 |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CRHL | (NON-CORE DATA) BIT QUANTITY | 1048576 |
CBBL | FEATURES PROVIDED | MONOLITHIC AND ELECTROSTATIC SENSITIVE AND LOW POWER AND BURN IN, MIL-STD-883, CLASS B |
CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 128K X 8 STATIC RANDOM ACCESS MEMORY (SRAM) LOW POWER |
FEAT | SPECIAL FEATURES | CIRCUIT FUNCTION-DUAL CE |
TTQY | TERMINAL TYPE AND QUANTITY | 32 PRINTED CIRCUIT |
AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
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