NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-460-9466 Item Description: Microcircuit Memory | 5962 | 014609466 | 0 | N | D | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
7 | D | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
L7c109mmb20 | 5 | 1 | 5 |
MRC | Criteria | Characteristic |
---|---|---|
FEAT | Special Features | CIRCUIT FUNCTION 128K X 8 STANDARD POWER CMOS SRAM DUAL CE / ACCESS TIME 20 NS |
AEHX | Maximum Power Dissipation Rating | 1.0 WATTS |
MRC | Decoded Requirement | Clear Text Reply |
TEST | Test Data Document | 96906-MIL-STD-833 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
CWSG | Terminal Surface Treatment | SOLDER |
CBBL | Features Provided | LOW POWER AND MONOLITHIC |
CQSZ | Inclosure Configuration | LEADLESS FLAT PACK |
AFGA | Operating Temp Range | -55.0 TO 125.0 DEG CELSIUS |
AFJQ | Storage Temp Range | -65.0 TO 150.0 DEG CELSIUS |
CXCY | Part Name Assigned By Controlling Agency | MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 128K X8 STACTIC RANDOM ACCESS MEMORY (SRAM) LOW POWER, MONOLITHIC SILICON |
TTQY | Terminal Type And Quantity | 32 LEADLESS |
AGAV | End Item Identification | 1055-01-251-9756 E/I FSCM 67268 |
CQWX | Output Logic Form | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
CZEN | Voltage Rating And Type Per Characteristic | -0.5 VOLTS MINIMUM INPUT AND 7.0 VOLTS MAXIMUM INPUT |
CZER | Memory Device Type | RAM |
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